Search Beyond News…

ROHM’s new 650V IGBT promises class‑leading low loss for automotive and industrial power applications

Executive summary: ROHM introduced a 4th‑generation 650V insulated‑gate bipolar transistor (IGBT) that claims class‑leading low loss, targeting automotive electric compressors, HV heaters and industrial inverter applications. The device meets the rising demand for higher efficiency in EV thermal‑management and industrial drives, potentially giving ROHM market share, reducing energy costs for users, and pressuring competitors to improve their offerings.

Who is involved: ROHM Co., Ltd.; automotive Tier‑1 suppliers; industrial equipment manufacturers.

Likely next: ROHM will begin sample shipments of the 650V IGBTs to automotive customers in Q4 2026; rivals may respond with improved IGBT or SiC alternatives; sustained German export confidence could boost order volumes.

ROHM’s announcement of a 4th‑generation 650V IGBT with class‑leading low loss addresses a growing need for efficient power conversion in electric vehicles and industrial equipment. The claim of industry‑leading performance positions the device to compete directly with existing offerings from rivals such as Infineon and STMicroelectronics. If the low‑loss characteristics translate into measurable efficiency gains, ROHM could gain traction in automotive thermal‑management markets and secure design wins with Tier‑1 suppliers. The timing coincides with an uptick in German export confidence, which may further support demand for its power‑semiconductor products.

Timeline

Analysis — what this means

Likely next events

Sectors affected

Historical parallels

Key entities

Sources

Browse the full archive →